Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations.
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| Title: | Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations. |
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| Authors: | Kerlain, A.1, alexandre.kerlain@sofradir.com, Brunner, A.1, Sam-Giao, D.1, Pére-Laperne, N.1, Rubaldo, L.1, Destefanis, V.1, Rochette, F.2, Cervera, C.2 |
| Source: | Journal of Electronic Materials; Sep2016, Vol. 45 Issue 9, p4557-4562, 6p |
| Database: | Applied Science & Technology Source |
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