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Ultra-high ON/OFF ratio and multi-storage on NiO resistive switching device.

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Title: Ultra-high ON/OFF ratio and multi-storage on NiO resistive switching device.
Authors: Ma, Guokun1, Tang, Xiaoli1, tangtang1227@163.com, Zhang, Huaiwu1, Zhong, Zhiyong1, Li, Xia2, Li, Jie1, Su, Hua1
Source: Journal of Materials Science; Jan2017, Vol. 52 Issue 1, p238-246, 9p, 7 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 118941753
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%22">Journal of Materials Science</searchLink>; Jan2017, Vol. 52 Issue 1, p238-246, 9p, 7 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=118941753
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1007/s10853-016-0326-5
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      – Code: eng
        Text: English
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        PageCount: 9
        StartPage: 238
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      – TitleFull: Ultra-high ON/OFF ratio and multi-storage on NiO resistive switching device.
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            NameFull: Ma, Guokun
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            NameFull: Tang, Xiaoli
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            NameFull: Zhang, Huaiwu
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            NameFull: Zhong, Zhiyong
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            NameFull: Li, Xia
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            NameFull: Li, Jie
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          Dates:
            – D: 01
              M: 01
              Text: Jan2017
              Type: published
              Y: 2017
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              Value: 52
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