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Design Techniques for a 30-ns Access Time 1.5-V 200-KB Embedded EEPROM Memory.

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Bibliographic Details
Title:	Design Techniques for a 30-ns Access Time 1.5-V 200-KB Embedded EEPROM Memory.
Authors:	Xu, Yiran¹, Hu, Jian², Xiao, Jun², Yang, Guangjun², Kong, Weiran²
Source:	IEEE Transactions on Circuits & Systems. Part II: Express Briefs; Nov2016, Vol. 63 Issue 11, p1064-1068, 5p
Database:	Applied Science & Technology Source

Description
ISSN:	15497747
DOI:	10.1109/TCSII.2016.2548238