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Design Techniques for a 30-ns Access Time 1.5-V 200-KB Embedded EEPROM Memory.

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Title: Design Techniques for a 30-ns Access Time 1.5-V 200-KB Embedded EEPROM Memory.
Authors: Xu, Yiran1, Hu, Jian2, Xiao, Jun2, Yang, Guangjun2, Kong, Weiran2
Source: IEEE Transactions on Circuits & Systems. Part II: Express Briefs; Nov2016, Vol. 63 Issue 11, p1064-1068, 5p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 119240700
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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        Value: 10.1109/TCSII.2016.2548238
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      – Code: eng
        Text: English
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            NameFull: Xiao, Jun
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              Text: Nov2016
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