View in EDS

Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature.

Saved in:
Bibliographic Details
Title: Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature.
Authors: Akihiko Yoshikawa1,2, yoshi@faculty.chiba-u.jp, Kazuhide Kusakabe1, Naoki Hashimoto1, Eun-Sook Hwang1, Daichi Imai1, Takaomi Itoi3
Source: Journal of Applied Physics; 2016, Vol. 120 Issue 22, p225303-1-225303-17, 17p, 6 Diagrams, 14 Graphs
Database: Applied Science & Technology Source
FullText Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 120245409
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Akihiko+Yoshikawa%22">Akihiko Yoshikawa</searchLink><relatesTo>1,2</relatesTo>, <i>yoshi@faculty.chiba-u.jp</i><br /><searchLink fieldCode="AU" term="%22Kazuhide+Kusakabe%22">Kazuhide Kusakabe</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Naoki+Hashimoto%22">Naoki Hashimoto</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Eun-Sook+Hwang%22">Eun-Sook Hwang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Daichi+Imai%22">Daichi Imai</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Takaomi+Itoi%22">Takaomi Itoi</searchLink><relatesTo>3</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 2016, Vol. 120 Issue 22, p225303-1-225303-17, 17p, 6 Diagrams, 14 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=120245409
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/1.4967928
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 17
        StartPage: 225303-1
    Titles:
      – TitleFull: Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Akihiko Yoshikawa
      – PersonEntity:
          Name:
            NameFull: Kazuhide Kusakabe
      – PersonEntity:
          Name:
            NameFull: Naoki Hashimoto
      – PersonEntity:
          Name:
            NameFull: Eun-Sook Hwang
      – PersonEntity:
          Name:
            NameFull: Daichi Imai
      – PersonEntity:
          Name:
            NameFull: Takaomi Itoi
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 14
              M: 12
              Text: 2016
              Type: published
              Y: 2016
          Identifiers:
            – Type: issn-print
              Value: 00218979
          Numbering:
            – Type: volume
              Value: 120
            – Type: issue
              Value: 22
          Titles:
            – TitleFull: Journal of Applied Physics
              Type: main
ResultId 1