Embedded Memory and ARM Cortex-M0 Core Using 60-nm C-Axis Aligned Crystalline Indium–Gallium–Zinc Oxide FET Integrated With 65-nm Si CMOS.

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Title: Embedded Memory and ARM Cortex-M0 Core Using 60-nm C-Axis Aligned Crystalline Indium–Gallium–Zinc Oxide FET Integrated With 65-nm Si CMOS.
Authors: Onuki, Tatsuya1, Uesugi, Wataru1, Isobe, Atsuo1, Ando, Yoshinori1, Okamoto, Satoru1, Kato, Kiyoshi1, Yew, Tri Rung2, Wu, J. Y.2, Shuai, Chi Chang2, Wu, Shao Hui2, Myers, James3, Doppler, Klaus4, Fujita, Masahiro5, Yamazaki, Shunpei1
Source: IEEE Journal of Solid-State Circuits; Apr2017, Vol. 52 Issue 4, p925-932, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 122301639
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Journal+of+Solid-State+Circuits%22">IEEE Journal of Solid-State Circuits</searchLink>; Apr2017, Vol. 52 Issue 4, p925-932, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=122301639
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      – Type: doi
        Value: 10.1109/JSSC.2016.2632303
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      – Code: eng
        Text: English
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        PageCount: 8
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      – TitleFull: Embedded Memory and ARM Cortex-M0 Core Using 60-nm C-Axis Aligned Crystalline Indium–Gallium–Zinc Oxide FET Integrated With 65-nm Si CMOS.
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              Text: Apr2017
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