Grenouilloux, T., Ferron, A., Péré-Laperne, N., & Mathiot, D. (2017). Diffusion Mechanism for Arsenic in Intrinsic and Extrinsic Conditions in HgCdTe. Journal of Electronic Materials, 46(9), 5394. https://doi.org/10.1007/s11664-017-5637-z
Chicago Style (17th ed.) CitationGrenouilloux, T., A. Ferron, N. Péré-Laperne, and D. Mathiot. "Diffusion Mechanism for Arsenic in Intrinsic and Extrinsic Conditions in HgCdTe." Journal of Electronic Materials 46, no. 9 (2017): 5394. https://doi.org/10.1007/s11664-017-5637-z.
MLA (9th ed.) CitationGrenouilloux, T., et al. "Diffusion Mechanism for Arsenic in Intrinsic and Extrinsic Conditions in HgCdTe." Journal of Electronic Materials, vol. 46, no. 9, 2017, p. 5394, https://doi.org/10.1007/s11664-017-5637-z.