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Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs.

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Title: Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs.
Authors: Sachdeva, Nitin1, Vashishath, Munish2, Bansal, P. K.2
Source: Journal of Nano- & Electronic Physics; 2017, Vol. 9 Issue 6, p1-4, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 126715415
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Nano-+%26+Electronic+Physics%22">Journal of Nano- & Electronic Physics</searchLink>; 2017, Vol. 9 Issue 6, p1-4, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=126715415
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.21272/jnep.9(6).06009
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 1
    Titles:
      – TitleFull: Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs.
        Type: main
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            NameFull: Sachdeva, Nitin
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          Name:
            NameFull: Vashishath, Munish
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            NameFull: Bansal, P. K.
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            – D: 01
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              Text: 2017
              Type: published
              Y: 2017
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              Value: 9
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              Value: 6
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            – TitleFull: Journal of Nano- & Electronic Physics
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