Broadband incoherent four-wave mixing and 27 dB idler conversion efficiency using ultra-silicon rich nitride devices.
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| Title: | Broadband incoherent four-wave mixing and 27 dB idler conversion efficiency using ultra-silicon rich nitride devices. |
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| Authors: | Choi, J. W.1, Sohn, B.-U.1, Chen, G. F. R.1, Ng, D. K. T.2, Tan, D. T. H.1 |
| Source: | Applied Physics Letters; 4/30/2018, Vol. 112 Issue 18, pN.PAG-N.PAG, 5p, 5 Graphs |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 129444584 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Broadband incoherent four-wave mixing and 27 dB idler conversion efficiency using ultra-silicon rich nitride devices. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Choi%2C+J%2E+W%2E%22">Choi, J. W.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Sohn%2C+B%2E-U%2E%22">Sohn, B.-U.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chen%2C+G%2E+F%2E+R%2E%22">Chen, G. F. R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Ng%2C+D%2E+K%2E+T%2E%22">Ng, D. K. T.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Tan%2C+D%2E+T%2E+H%2E%22">Tan, D. T. H.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 4/30/2018, Vol. 112 Issue 18, pN.PAG-N.PAG, 5p, 5 Graphs |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=129444584 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/1.5010841 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: N.PAG Titles: – TitleFull: Broadband incoherent four-wave mixing and 27 dB idler conversion efficiency using ultra-silicon rich nitride devices. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Choi, J. W. – PersonEntity: Name: NameFull: Sohn, B.-U. – PersonEntity: Name: NameFull: Chen, G. F. R. – PersonEntity: Name: NameFull: Ng, D. K. T. – PersonEntity: Name: NameFull: Tan, D. T. H. IsPartOfRelationships: – BibEntity: Dates: – D: 30 M: 04 Text: 4/30/2018 Type: published Y: 2018 Identifiers: – Type: issn-print Value: 00036951 Numbering: – Type: volume Value: 112 – Type: issue Value: 18 Titles: – TitleFull: Applied Physics Letters Type: main |
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