APA (7th ed.) Citation

Sun, Z., Wei, L., Feng, C., Miao, P., Guo, M., Yang, H., . . . Zhao, Y. (2017). Built‐In‐Homojunction‐Dominated Intrinsically Rectifying‐Resistive Switching in NiO Nanodots for Selection‐Device‐Free Memory Application. Advanced Electronic Materials, 3(1), 1. https://doi.org/10.1002/aelm.201600361

Chicago Style (17th ed.) Citation

Sun, Zhong, Linlin Wei, Ce Feng, Peixian Miao, Meiqi Guo, Huaixin Yang, Jianqi Li, and Yonggang Zhao. "Built‐In‐Homojunction‐Dominated Intrinsically Rectifying‐Resistive Switching in NiO Nanodots for Selection‐Device‐Free Memory Application." Advanced Electronic Materials 3, no. 1 (2017): 1. https://doi.org/10.1002/aelm.201600361.

MLA (9th ed.) Citation

Sun, Zhong, et al. "Built‐In‐Homojunction‐Dominated Intrinsically Rectifying‐Resistive Switching in NiO Nanodots for Selection‐Device‐Free Memory Application." Advanced Electronic Materials, vol. 3, no. 1, 2017, p. 1, https://doi.org/10.1002/aelm.201600361.