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Built‐In‐Homojunction‐Dominated Intrinsically Rectifying‐Resistive Switching in NiO Nanodots for Selection‐Device‐Free Memory Application.

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Title: Built‐In‐Homojunction‐Dominated Intrinsically Rectifying‐Resistive Switching in NiO Nanodots for Selection‐Device‐Free Memory Application.
Authors: Sun, Zhong1,2, Wei, Linlin3, Feng, Ce1,2, Miao, Peixian1,2, Guo, Meiqi1,2, Yang, Huaixin3, Li, Jianqi2,3, Zhao, Yonggang1,2, ygzhao@tsinghua.edu.cn
Source: Advanced Electronic Materials; Jan2017, Vol. 3 Issue 1, p1-1, 8p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 129892426
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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        Value: 10.1002/aelm.201600361
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        Text: English
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      – TitleFull: Built‐In‐Homojunction‐Dominated Intrinsically Rectifying‐Resistive Switching in NiO Nanodots for Selection‐Device‐Free Memory Application.
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              Text: Jan2017
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