APA (7th ed.) Citation

Lytvyn, P. M., Malyuta, S. V., Indutnyi, I. Z., Efremov, A. A., Slobodyan, O. V., Min'ko, V. I., . . . Prokopenko, I. V. (2018). Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist. Semiconductor Physics, Quantum Electronics & Optoelectronics, 21(2), 152. https://doi.org/10.15407/spqeo21.02.152

Chicago Style (17th ed.) Citation

Lytvyn, P. M., S. V. Malyuta, I. Z. Indutnyi, A. A. Efremov, O. V. Slobodyan, V. I. Min'ko, A. N. Nazarov, O. V. Borysov, and I. V. Prokopenko. "Features of Mechanical Scanning Probe Lithography on Graphene Oxide and As(Ge)Se Chalcogenide Resist." Semiconductor Physics, Quantum Electronics & Optoelectronics 21, no. 2 (2018): 152. https://doi.org/10.15407/spqeo21.02.152.

MLA (9th ed.) Citation

Lytvyn, P. M., et al. "Features of Mechanical Scanning Probe Lithography on Graphene Oxide and As(Ge)Se Chalcogenide Resist." Semiconductor Physics, Quantum Electronics & Optoelectronics, vol. 21, no. 2, 2018, p. 152, https://doi.org/10.15407/spqeo21.02.152.