Dannangoda, G., Key, C., Sumets, M., & Martirosyan, K. (2018). Transition of p- to n-Type Conductivity in Mechanically Activated Bismuth Telluride. Journal of Electronic Materials, 47(10), 5800. https://doi.org/10.1007/s11664-018-6469-1
Chicago Style (17th ed.) CitationDannangoda, G.C, C. Key, M. Sumets, and K.S Martirosyan. "Transition of P- to N-Type Conductivity in Mechanically Activated Bismuth Telluride." Journal of Electronic Materials 47, no. 10 (2018): 5800. https://doi.org/10.1007/s11664-018-6469-1.
MLA (9th ed.) CitationDannangoda, G.C, et al. "Transition of P- to N-Type Conductivity in Mechanically Activated Bismuth Telluride." Journal of Electronic Materials, vol. 47, no. 10, 2018, p. 5800, https://doi.org/10.1007/s11664-018-6469-1.