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Gunn Diodes Based on Graded InGaP-InPAs.

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Bibliographic Details
Title: Gunn Diodes Based on Graded InGaP-InPAs.
Authors: Storozhenko, I. P.1,2, prof.igor.storozhenko@gmail.com, Kaydash, M. V.2,3
Source: Journal of Nano- & Electronic Physics; 2018, Vol. 10 Issue 4, p1-6, 6p
Database: Applied Science & Technology Source
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        Value: 10.21272/jnep.10(4).04014
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        Text: English
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      – TitleFull: Gunn Diodes Based on Graded InGaP-InPAs.
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