Bibliographic Details
| Title: |
Improving the performance of Ge2Sb2Te5 materials via nickel doping: Towards RF-compatible phase-change devices. |
| Authors: |
Guo, Pengfei1, guop01@udayton.edu, Burrow, Joshua A.1, Sevison, Gary A.1,2, Sood, Aditya3,4, Asheghi, Mehdi4, Hendrickson, Joshua R.2, Goodson, Kenneth E.4, Agha, Imad1,5, Sarangan, Andrew1, asaragan1@udayton.edu |
| Source: |
Applied Physics Letters; 10/22/2018, Vol. 113 Issue 17, pN.PAG-N.PAG, 5p, 1 Chart, 5 Graphs |
| Database: |
Applied Science & Technology Source |
