Improving the performance of Ge2Sb2Te5 materials via nickel doping: Towards RF-compatible phase-change devices.
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| Title: | Improving the performance of Ge2Sb2Te5 materials via nickel doping: Towards RF-compatible phase-change devices. |
|---|---|
| Authors: | Guo, Pengfei1, guop01@udayton.edu, Burrow, Joshua A.1, Sevison, Gary A.1,2, Sood, Aditya3,4, Asheghi, Mehdi4, Hendrickson, Joshua R.2, Goodson, Kenneth E.4, Agha, Imad1,5, Sarangan, Andrew1, asaragan1@udayton.edu |
| Source: | Applied Physics Letters; 10/22/2018, Vol. 113 Issue 17, pN.PAG-N.PAG, 5p, 1 Chart, 5 Graphs |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 132807150 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Improving the performance of Ge2Sb2Te5 materials via nickel doping: Towards RF-compatible phase-change devices. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Guo%2C+Pengfei%22">Guo, Pengfei</searchLink><relatesTo>1</relatesTo>, <i>guop01@udayton.edu</i><br /><searchLink fieldCode="AU" term="%22Burrow%2C+Joshua+A%2E%22">Burrow, Joshua A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Sevison%2C+Gary+A%2E%22">Sevison, Gary A.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Sood%2C+Aditya%22">Sood, Aditya</searchLink><relatesTo>3,4</relatesTo><br /><searchLink fieldCode="AU" term="%22Asheghi%2C+Mehdi%22">Asheghi, Mehdi</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Hendrickson%2C+Joshua+R%2E%22">Hendrickson, Joshua R.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Goodson%2C+Kenneth+E%2E%22">Goodson, Kenneth E.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Agha%2C+Imad%22">Agha, Imad</searchLink><relatesTo>1,5</relatesTo><br /><searchLink fieldCode="AU" term="%22Sarangan%2C+Andrew%22">Sarangan, Andrew</searchLink><relatesTo>1</relatesTo>, <i>asaragan1@udayton.edu</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 10/22/2018, Vol. 113 Issue 17, pN.PAG-N.PAG, 5p, 1 Chart, 5 Graphs |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=132807150 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/1.5053713 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: N.PAG Titles: – TitleFull: Improving the performance of Ge2Sb2Te5 materials via nickel doping: Towards RF-compatible phase-change devices. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Guo, Pengfei – PersonEntity: Name: NameFull: Burrow, Joshua A. – PersonEntity: Name: NameFull: Sevison, Gary A. – PersonEntity: Name: NameFull: Sood, Aditya – PersonEntity: Name: NameFull: Asheghi, Mehdi – PersonEntity: Name: NameFull: Hendrickson, Joshua R. – PersonEntity: Name: NameFull: Goodson, Kenneth E. – PersonEntity: Name: NameFull: Agha, Imad – PersonEntity: Name: NameFull: Sarangan, Andrew IsPartOfRelationships: – BibEntity: Dates: – D: 22 M: 10 Text: 10/22/2018 Type: published Y: 2018 Identifiers: – Type: issn-print Value: 00036951 Numbering: – Type: volume Value: 113 – Type: issue Value: 17 Titles: – TitleFull: Applied Physics Letters Type: main |
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