SRAMs and DRAMs With Separate Read–Write Ports Augmented by Phase Transition Materials.
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| Title: | SRAMs and DRAMs With Separate Read–Write Ports Augmented by Phase Transition Materials. |
|---|---|
| Authors: | Shen, Zhesheng, Srinivasa, Srivatsa, Aziz, Ahmedullah, Datta, Suman, Narayanan, Vijaykrishnan, Gupta, Sumeet Kumar |
| Source: | IEEE Transactions on Electron Devices; Feb2019, Vol. 66 Issue 2, p929-937, 9p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 134552142 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=134552142 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/TED.2018.2888913 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 929 Titles: – TitleFull: SRAMs and DRAMs With Separate Read–Write Ports Augmented by Phase Transition Materials. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Shen, Zhesheng – PersonEntity: Name: NameFull: Srinivasa, Srivatsa – PersonEntity: Name: NameFull: Aziz, Ahmedullah – PersonEntity: Name: NameFull: Datta, Suman – PersonEntity: Name: NameFull: Narayanan, Vijaykrishnan – PersonEntity: Name: NameFull: Gupta, Sumeet Kumar IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 02 Text: Feb2019 Type: published Y: 2019 Identifiers: – Type: issn-print Value: 00189383 Numbering: – Type: volume Value: 66 – Type: issue Value: 2 Titles: – TitleFull: IEEE Transactions on Electron Devices Type: main |
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