Jayalakshmi, G., Saravanan, K., Navas, J., Arun, T., & Panigrahi, B. K. (2019). Fabrication of p-NiO nanoflakes/n-Si(100) heterojunction architecture for high sensitive photodetectors. Journal of Materials Science: Materials in Electronics, 30(7), 6811. https://doi.org/10.1007/s10854-019-00993-y
Chicago Style (17th ed.) CitationJayalakshmi, G., K. Saravanan, J. Navas, T. Arun, and B. K. Panigrahi. "Fabrication of P-NiO Nanoflakes/n-Si(100) Heterojunction Architecture for High Sensitive Photodetectors." Journal of Materials Science: Materials in Electronics 30, no. 7 (2019): 6811. https://doi.org/10.1007/s10854-019-00993-y.
MLA (9th ed.) CitationJayalakshmi, G., et al. "Fabrication of P-NiO Nanoflakes/n-Si(100) Heterojunction Architecture for High Sensitive Photodetectors." Journal of Materials Science: Materials in Electronics, vol. 30, no. 7, 2019, p. 6811, https://doi.org/10.1007/s10854-019-00993-y.