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DFT modelling of the edge dislocation in 4H-SiC.

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Title: DFT modelling of the edge dislocation in 4H-SiC.
Authors: Łażewski, J.1, jan.lazewski@ifj.edu.pl, Jochym, P. T.1, Piekarz, P.1, Sternik, M.1, Parlinski, K.1, Cholewiński, J.2, Dłużewski, P.2, Krukowski, S.3
Source: Journal of Materials Science; Aug2019, Vol. 54 Issue 15, p10737-10745, 9p, 1 Color Photograph, 1 Chart, 4 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 136463893
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  Data: DFT modelling of the edge dislocation in 4H-SiC.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%22">Journal of Materials Science</searchLink>; Aug2019, Vol. 54 Issue 15, p10737-10745, 9p, 1 Color Photograph, 1 Chart, 4 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=136463893
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1007/s10853-019-03630-5
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      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 9
        StartPage: 10737
    Titles:
      – TitleFull: DFT modelling of the edge dislocation in 4H-SiC.
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            NameFull: Łażewski, J.
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            NameFull: Jochym, P. T.
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            NameFull: Piekarz, P.
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            NameFull: Sternik, M.
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            NameFull: Parlinski, K.
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            NameFull: Cholewiński, J.
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            NameFull: Dłużewski, P.
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            – D: 01
              M: 08
              Text: Aug2019
              Type: published
              Y: 2019
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              Value: 00222461
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              Value: 54
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              Value: 15
          Titles:
            – TitleFull: Journal of Materials Science
              Type: main
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