APA (7th ed.) Citation

Majdi, S., Gabrysch, M., Suntornwipat, N., Burmeister, F., Jonsson, R., Kovi, K. K., & Hallén, A. (2019). High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors. Review of Scientific Instruments, 90(6), N.PAG. https://doi.org/10.1063/1.5097755

Chicago Style (17th ed.) Citation

Majdi, S., M. Gabrysch, N. Suntornwipat, F. Burmeister, R. Jonsson, K. K. Kovi, and A. Hallén. "High-temperature Deep-level Transient Spectroscopy System for Defect Studies in Wide-bandgap Semiconductors." Review of Scientific Instruments 90, no. 6 (2019): N.PAG. https://doi.org/10.1063/1.5097755.

MLA (9th ed.) Citation

Majdi, S., et al. "High-temperature Deep-level Transient Spectroscopy System for Defect Studies in Wide-bandgap Semiconductors." Review of Scientific Instruments, vol. 90, no. 6, 2019, p. N.PAG, https://doi.org/10.1063/1.5097755.