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High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors.

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Title: High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors.
Authors: Majdi, S.1, Saman.Majdi@angstrom.uu.se, Gabrysch, M.1, Suntornwipat, N.1, Burmeister, F.1, Jonsson, R.1, Kovi, K. K.1,2, Hallén, A.3,4
Source: Review of Scientific Instruments; Jun2019, Vol. 90 Issue 6, pN.PAG-N.PAG, 5p, 2 Diagrams, 3 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 137252513
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors.
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  Data: <searchLink fieldCode="AU" term="%22Majdi%2C+S%2E%22">Majdi, S.</searchLink><relatesTo>1</relatesTo>, <i>Saman.Majdi@angstrom.uu.se</i><br /><searchLink fieldCode="AU" term="%22Gabrysch%2C+M%2E%22">Gabrysch, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Suntornwipat%2C+N%2E%22">Suntornwipat, N.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Burmeister%2C+F%2E%22">Burmeister, F.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Jonsson%2C+R%2E%22">Jonsson, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kovi%2C+K%2E+K%2E%22">Kovi, K. K.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Hallén%2C+A%2E%22">Hallén, A.</searchLink><relatesTo>3,4</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Review+of+Scientific+Instruments%22">Review of Scientific Instruments</searchLink>; Jun2019, Vol. 90 Issue 6, pN.PAG-N.PAG, 5p, 2 Diagrams, 3 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=137252513
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/1.5097755
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      – Code: eng
        Text: English
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      – TitleFull: High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors.
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            – D: 01
              M: 06
              Text: Jun2019
              Type: published
              Y: 2019
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