APA (7th ed.) Citation

Mo, H., Zhang, Y., & Song, H. (2019). Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect. Active & Passive Electronic Components, 1. https://doi.org/10.1155/2019/8425198

Chicago Style (17th ed.) Citation

Mo, Haifeng, Yaohui Zhang, and Helun Song. "Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect." Active & Passive Electronic Components 2019: 1. https://doi.org/10.1155/2019/8425198.

MLA (9th ed.) Citation

Mo, Haifeng, et al. "Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect." Active & Passive Electronic Components, 2019, p. 1, https://doi.org/10.1155/2019/8425198.