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Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect.

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Bibliographic Details
Title: Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect.
Authors: Mo, Haifeng1,2, Zhang, Yaohui1, Song, Helun1
Source: Active & Passive Electronic Components; 7/14/2019, p1-7, 7p, 5 Diagrams, 2 Charts, 7 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 137465284
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=137465284
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1155/2019/8425198
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 7
        StartPage: 1
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      – TitleFull: Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect.
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            NameFull: Mo, Haifeng
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            NameFull: Zhang, Yaohui
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            NameFull: Song, Helun
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          Dates:
            – D: 14
              M: 07
              Text: 7/14/2019
              Type: published
              Y: 2019
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