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Over 30% External Quantum Efficiency Light‐Emitting Diodes by Engineering Quantum Dot‐Assisted Energy Level Match for Hole Transport Layer.

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Title: Over 30% External Quantum Efficiency Light‐Emitting Diodes by Engineering Quantum Dot‐Assisted Energy Level Match for Hole Transport Layer.
Authors: Song, Jiaojiao1, Wang, Ouyang1, Shen, Huaibin1, shenhuaibin@henu.edu.cn, Lin, Qingli1, Li, Zhaohan1, Wang, Lei2, Zhang, Xintong2, Li, Lin Song1, lsli@henu.edu.cn
Source: Advanced Functional Materials; 8/15/2019, Vol. 29 Issue 33, pN.PAG-N.PAG, 1p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 138053063
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Over 30% External Quantum Efficiency Light‐Emitting Diodes by Engineering Quantum Dot‐Assisted Energy Level Match for Hole Transport Layer.
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        Value: 10.1002/adfm.201808377
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        Text: English
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      – TitleFull: Over 30% External Quantum Efficiency Light‐Emitting Diodes by Engineering Quantum Dot‐Assisted Energy Level Match for Hole Transport Layer.
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              M: 08
              Text: 8/15/2019
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              Y: 2019
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