Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties.
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| Title: | Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties. |
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| Authors: | Ściana, B.1, beata.sciana@pwr.edu.pl, Radziewicz, D.1, Dawidowski, W.1, Bielak, K.1, Szyszka, A.1, Kopaczek, J.2 |
| Source: | Journal of Materials Science: Materials in Electronics; Sep2019, Vol. 30 Issue 17, p16216-16225, 10p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 09574522 |
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| DOI: | 10.1007/s10854-019-01990-x |
