View in EDS HTML Full Text PDF Full Text

Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties.

Saved in:
Bibliographic Details
Title: Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties.
Authors: Ściana, B.1, beata.sciana@pwr.edu.pl, Radziewicz, D.1, Dawidowski, W.1, Bielak, K.1, Szyszka, A.1, Kopaczek, J.2
Source: Journal of Materials Science: Materials in Electronics; Sep2019, Vol. 30 Issue 17, p16216-16225, 10p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 138578372
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Ściana%2C+B%2E%22">Ściana, B.</searchLink><relatesTo>1</relatesTo>, <i>beata.sciana@pwr.edu.pl</i><br /><searchLink fieldCode="AU" term="%22Radziewicz%2C+D%2E%22">Radziewicz, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Dawidowski%2C+W%2E%22">Dawidowski, W.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Bielak%2C+K%2E%22">Bielak, K.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Szyszka%2C+A%2E%22">Szyszka, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kopaczek%2C+J%2E%22">Kopaczek, J.</searchLink><relatesTo>2</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Sep2019, Vol. 30 Issue 17, p16216-16225, 10p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=138578372
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10854-019-01990-x
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 10
        StartPage: 16216
    Titles:
      – TitleFull: Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Ściana, B.
      – PersonEntity:
          Name:
            NameFull: Radziewicz, D.
      – PersonEntity:
          Name:
            NameFull: Dawidowski, W.
      – PersonEntity:
          Name:
            NameFull: Bielak, K.
      – PersonEntity:
          Name:
            NameFull: Szyszka, A.
      – PersonEntity:
          Name:
            NameFull: Kopaczek, J.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 09
              Text: Sep2019
              Type: published
              Y: 2019
          Identifiers:
            – Type: issn-print
              Value: 09574522
          Numbering:
            – Type: volume
              Value: 30
            – Type: issue
              Value: 17
          Titles:
            – TitleFull: Journal of Materials Science: Materials in Electronics
              Type: main
ResultId 1