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Design and Characterization of a 28-nm Bulk-CMOS Cryogenic Quantum Controller Dissipating Less Than 2 mW at 3 K.

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Title: Design and Characterization of a 28-nm Bulk-CMOS Cryogenic Quantum Controller Dissipating Less Than 2 mW at 3 K.
Authors: Bardin, Joseph C.1, jbardin@ecs.umass.edu, Jeffrey, Evan2, Lucero, Erik2, Huang, Trent2, Das, Sayan1, Sank, Daniel Thomas2, Naaman, Ofer2, Megrant, Anthony Edward2, Barends, Rami2, White, Ted2, Giustina, Marissa2, Satzinger, Kevin J.2, Arya, Kunal2, Roushan, Pedram2, Chiaro, Benjamin3, Kelly, Julian2, Chen, Zijun2, Burkett, Brian2, Chen, Yu2, Dunsworth, Andrew2
Source: IEEE Journal of Solid-State Circuits; Nov2019, Vol. 54 Issue 11, p3043-3060, 18p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 139290987
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Design and Characterization of a 28-nm Bulk-CMOS Cryogenic Quantum Controller Dissipating Less Than 2 mW at 3 K.
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Journal+of+Solid-State+Circuits%22">IEEE Journal of Solid-State Circuits</searchLink>; Nov2019, Vol. 54 Issue 11, p3043-3060, 18p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=139290987
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        Value: 10.1109/JSSC.2019.2937234
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        Text: English
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        StartPage: 3043
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              Text: Nov2019
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