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Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield.

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Bibliographic Details
Title:	Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield.
Authors:	Mo, Haifeng^1,2, Zhang, Yaohui¹, Song, Helun¹
Source:	Active & Passive Electronic Components; 11/20/2019, p1-8, 8p, 5 Diagrams, 2 Charts, 5 Graphs
Database:	Applied Science & Technology Source
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Description
ISSN:	08827516
DOI:	10.1155/2019/1928494