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Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield.

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Bibliographic Details
Title: Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield.
Authors: Mo, Haifeng1,2, Zhang, Yaohui1, Song, Helun1
Source: Active & Passive Electronic Components; 11/20/2019, p1-8, 8p, 5 Diagrams, 2 Charts, 5 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 139756274
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=139756274
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    Identifiers:
      – Type: doi
        Value: 10.1155/2019/1928494
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 1
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      – TitleFull: Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield.
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            NameFull: Mo, Haifeng
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            NameFull: Zhang, Yaohui
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            NameFull: Song, Helun
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            – D: 20
              M: 11
              Text: 11/20/2019
              Type: published
              Y: 2019
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