APA (7th ed.) Citation

Singh, A. K., Fui, T. C., & Wilson, T. W. X. (2020). Threshold voltage model for hetero-gate-dielectric tunneling field effect transistors. International Journal of Electrical & Computer Engineering (2088-8708), 10(3), 1764. https://doi.org/10.11591/ijece.v10i2.pp1764-1771

Chicago Style (17th ed.) Citation

Singh, Ajay Kumar, Tan Chun Fui, and Tan Wee Xin Wilson. "Threshold Voltage Model for Hetero-gate-dielectric Tunneling Field Effect Transistors." International Journal of Electrical & Computer Engineering (2088-8708) 10, no. 3 (2020): 1764. https://doi.org/10.11591/ijece.v10i2.pp1764-1771.

MLA (9th ed.) Citation

Singh, Ajay Kumar, et al. "Threshold Voltage Model for Hetero-gate-dielectric Tunneling Field Effect Transistors." International Journal of Electrical & Computer Engineering (2088-8708), vol. 10, no. 3, 2020, p. 1764, https://doi.org/10.11591/ijece.v10i2.pp1764-1771.