One‐Selector One‐Resistor Devices: Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer (Adv. Electron. Mater. 1/2020).
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| Title: | One‐Selector One‐Resistor Devices: Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer (Adv. Electron. Mater. 1/2020). |
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| Authors: | Chen, Ao, Ma, Guokun, Zhang, Ziqi, Lin, Chih‐Yang, Lin, Chun‐Chu, Chang, Ting‐Chang, Tao, Li, Wang, Hao |
| Source: | Advanced Electronic Materials; Jan2020, Vol. 6 Issue 1, pN.PAG-N.PAG, 1p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 141190570 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: One‐Selector One‐Resistor Devices: Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer (Adv. Electron. Mater. 1/2020). – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Chen%2C+Ao%22">Chen, Ao</searchLink><br /><searchLink fieldCode="AU" term="%22Ma%2C+Guokun%22">Ma, Guokun</searchLink><br /><searchLink fieldCode="AU" term="%22Zhang%2C+Ziqi%22">Zhang, Ziqi</searchLink><br /><searchLink fieldCode="AU" term="%22Lin%2C+Chih‐Yang%22">Lin, Chih‐Yang</searchLink><br /><searchLink fieldCode="AU" term="%22Lin%2C+Chun‐Chu%22">Lin, Chun‐Chu</searchLink><br /><searchLink fieldCode="AU" term="%22Chang%2C+Ting‐Chang%22">Chang, Ting‐Chang</searchLink><br /><searchLink fieldCode="AU" term="%22Tao%2C+Li%22">Tao, Li</searchLink><br /><searchLink fieldCode="AU" term="%22Wang%2C+Hao%22">Wang, Hao</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Advanced+Electronic+Materials%22">Advanced Electronic Materials</searchLink>; Jan2020, Vol. 6 Issue 1, pN.PAG-N.PAG, 1p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=141190570 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1002/aelm.202070002 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 1 StartPage: N.PAG Titles: – TitleFull: One‐Selector One‐Resistor Devices: Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer (Adv. Electron. Mater. 1/2020). Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Chen, Ao – PersonEntity: Name: NameFull: Ma, Guokun – PersonEntity: Name: NameFull: Zhang, Ziqi – PersonEntity: Name: NameFull: Lin, Chih‐Yang – PersonEntity: Name: NameFull: Lin, Chun‐Chu – PersonEntity: Name: NameFull: Chang, Ting‐Chang – PersonEntity: Name: NameFull: Tao, Li – PersonEntity: Name: NameFull: Wang, Hao IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Text: Jan2020 Type: published Y: 2020 Identifiers: – Type: issn-print Value: 2199160X Numbering: – Type: volume Value: 6 – Type: issue Value: 1 Titles: – TitleFull: Advanced Electronic Materials Type: main |
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