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GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy.

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Title: GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy.
Authors: Milanova, Malina1, Donchev, Vesselin2, vtd@phys.uni-sofia.bg, Arnaudov, Boris2, Alonso-Álvarez, Diego3, Terziyska, Penka4
Source: Journal of Materials Science: Materials in Electronics; Feb2020, Vol. 31 Issue 3, p2073-2080, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 141454006
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PubType: Academic Journal
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  Data: GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy.
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  Data: <searchLink fieldCode="AU" term="%22Milanova%2C+Malina%22">Milanova, Malina</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Donchev%2C+Vesselin%22">Donchev, Vesselin</searchLink><relatesTo>2</relatesTo>, <i>vtd@phys.uni-sofia.bg</i><br /><searchLink fieldCode="AU" term="%22Arnaudov%2C+Boris%22">Arnaudov, Boris</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Alonso-Álvarez%2C+Diego%22">Alonso-Álvarez, Diego</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Terziyska%2C+Penka%22">Terziyska, Penka</searchLink><relatesTo>4</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Feb2020, Vol. 31 Issue 3, p2073-2080, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=141454006
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        Value: 10.1007/s10854-019-02728-5
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      – Code: eng
        Text: English
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        StartPage: 2073
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      – TitleFull: GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy.
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              Text: Feb2020
              Type: published
              Y: 2020
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