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Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment.

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Bibliographic Details
Title: Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment.
Authors: Huang, Kuei-Wen1, Chang, Teng-Jan1, Wang, Chun-Yuan1, Yi, Sheng-Han1, Wang, Chin-I.1, Jiang, Yu-Sen1, Yin, Yu-Tung1, Lin, Hsin-Chih1, hclinntu@ntu.edu.tw, Chen, Miin-Jang1, mjchen@ntu.edu.tw
Source: Materials Science in Semiconductor Processing; Apr2020, Vol. 109, pN.PAG-N.PAG, 1p
Database: Applied Science & Technology Source
Description
ISSN:13698001
DOI:10.1016/j.mssp.2020.104933