Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment.
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| Title: | Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment. |
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| Authors: | Huang, Kuei-Wen1, Chang, Teng-Jan1, Wang, Chun-Yuan1, Yi, Sheng-Han1, Wang, Chin-I.1, Jiang, Yu-Sen1, Yin, Yu-Tung1, Lin, Hsin-Chih1, hclinntu@ntu.edu.tw, Chen, Miin-Jang1, mjchen@ntu.edu.tw |
| Source: | Materials Science in Semiconductor Processing; Apr2020, Vol. 109, pN.PAG-N.PAG, 1p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 141684069 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Huang%2C+Kuei-Wen%22">Huang, Kuei-Wen</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chang%2C+Teng-Jan%22">Chang, Teng-Jan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Chun-Yuan%22">Wang, Chun-Yuan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Yi%2C+Sheng-Han%22">Yi, Sheng-Han</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Chin-I%2E%22">Wang, Chin-I.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Jiang%2C+Yu-Sen%22">Jiang, Yu-Sen</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Yin%2C+Yu-Tung%22">Yin, Yu-Tung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Lin%2C+Hsin-Chih%22">Lin, Hsin-Chih</searchLink><relatesTo>1</relatesTo>, <i>hclinntu@ntu.edu.tw</i><br /><searchLink fieldCode="AU" term="%22Chen%2C+Miin-Jang%22">Chen, Miin-Jang</searchLink><relatesTo>1</relatesTo>, <i>mjchen@ntu.edu.tw</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Materials+Science+in+Semiconductor+Processing%22">Materials Science in Semiconductor Processing</searchLink>; Apr2020, Vol. 109, pN.PAG-N.PAG, 1p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=141684069 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.mssp.2020.104933 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 1 StartPage: N.PAG Titles: – TitleFull: Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Huang, Kuei-Wen – PersonEntity: Name: NameFull: Chang, Teng-Jan – PersonEntity: Name: NameFull: Wang, Chun-Yuan – PersonEntity: Name: NameFull: Yi, Sheng-Han – PersonEntity: Name: NameFull: Wang, Chin-I. – PersonEntity: Name: NameFull: Jiang, Yu-Sen – PersonEntity: Name: NameFull: Yin, Yu-Tung – PersonEntity: Name: NameFull: Lin, Hsin-Chih – PersonEntity: Name: NameFull: Chen, Miin-Jang IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: Apr2020 Type: published Y: 2020 Identifiers: – Type: issn-print Value: 13698001 Numbering: – Type: volume Value: 109 Titles: – TitleFull: Materials Science in Semiconductor Processing Type: main |
| ResultId | 1 |