Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment.

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Title: Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment.
Authors: Huang, Kuei-Wen1, Chang, Teng-Jan1, Wang, Chun-Yuan1, Yi, Sheng-Han1, Wang, Chin-I.1, Jiang, Yu-Sen1, Yin, Yu-Tung1, Lin, Hsin-Chih1, hclinntu@ntu.edu.tw, Chen, Miin-Jang1, mjchen@ntu.edu.tw
Source: Materials Science in Semiconductor Processing; Apr2020, Vol. 109, pN.PAG-N.PAG, 1p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 141684069
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Huang%2C+Kuei-Wen%22">Huang, Kuei-Wen</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chang%2C+Teng-Jan%22">Chang, Teng-Jan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Chun-Yuan%22">Wang, Chun-Yuan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Yi%2C+Sheng-Han%22">Yi, Sheng-Han</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Chin-I%2E%22">Wang, Chin-I.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Jiang%2C+Yu-Sen%22">Jiang, Yu-Sen</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Yin%2C+Yu-Tung%22">Yin, Yu-Tung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Lin%2C+Hsin-Chih%22">Lin, Hsin-Chih</searchLink><relatesTo>1</relatesTo>, <i>hclinntu@ntu.edu.tw</i><br /><searchLink fieldCode="AU" term="%22Chen%2C+Miin-Jang%22">Chen, Miin-Jang</searchLink><relatesTo>1</relatesTo>, <i>mjchen@ntu.edu.tw</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Materials+Science+in+Semiconductor+Processing%22">Materials Science in Semiconductor Processing</searchLink>; Apr2020, Vol. 109, pN.PAG-N.PAG, 1p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=141684069
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.mssp.2020.104933
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Titles:
      – TitleFull: Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Huang, Kuei-Wen
      – PersonEntity:
          Name:
            NameFull: Chang, Teng-Jan
      – PersonEntity:
          Name:
            NameFull: Wang, Chun-Yuan
      – PersonEntity:
          Name:
            NameFull: Yi, Sheng-Han
      – PersonEntity:
          Name:
            NameFull: Wang, Chin-I.
      – PersonEntity:
          Name:
            NameFull: Jiang, Yu-Sen
      – PersonEntity:
          Name:
            NameFull: Yin, Yu-Tung
      – PersonEntity:
          Name:
            NameFull: Lin, Hsin-Chih
      – PersonEntity:
          Name:
            NameFull: Chen, Miin-Jang
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 04
              Text: Apr2020
              Type: published
              Y: 2020
          Identifiers:
            – Type: issn-print
              Value: 13698001
          Numbering:
            – Type: volume
              Value: 109
          Titles:
            – TitleFull: Materials Science in Semiconductor Processing
              Type: main
ResultId 1