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Gallium–Boron–Phosphide (GaBP2): a new III–V semiconductor for photovoltaics.

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Title: Gallium–Boron–Phosphide (GaBP2): a new III–V semiconductor for photovoltaics.
Authors: Kumar, Upendra1, Nayak, Sanjay1, Chakrabarty, Soubhik1, Bhattacharjee, Satadeep1, Lee, Seung-Cheol1, seungcheol.lee@ikst.res.in
Source: Journal of Materials Science; Aug2020, Vol. 55 Issue 22, p9448-9460, 13p, 1 Diagram, 2 Charts, 6 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
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PubType: Academic Journal
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%22">Journal of Materials Science</searchLink>; Aug2020, Vol. 55 Issue 22, p9448-9460, 13p, 1 Diagram, 2 Charts, 6 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=143301974
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        Value: 10.1007/s10853-020-04631-5
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        Text: English
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            NameFull: Nayak, Sanjay
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            NameFull: Chakrabarty, Soubhik
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            NameFull: Bhattacharjee, Satadeep
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              Text: Aug2020
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              Y: 2020
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