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Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells.

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Title: Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells.
Authors: Chang, Ching-Wen1,2,3, Wadekar, Paritosh V.1, Huang, Hui-Chun4, Chen, Quark Yung-Sung1,5, Wu, Yuh-Renn6, Chen, Ray T.2, Tu, Li-Wei1,7, lwtu@mail.nsysu.edu.tw
Source: Nanoscale Research Letters; 8/20/2020, Vol. 15 Issue 1, pN.PAG-N.PAG, 1p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 145258595
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  Data: Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells.
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        Value: 10.1186/s11671-020-03392-z
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        Text: English
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      – TitleFull: Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells.
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              Text: 8/20/2020
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              Y: 2020
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