APA (7th ed.) Citation

Chen, Y., Lu, H., & Lai, T. (2020). Individual contribution of electrons and holes to photocarrier-induced bandgap renormalization in intrinsic bulk GaAs. Journal of Applied Physics, 128(11), 1. https://doi.org/10.1063/5.0015495

Chicago Style (17th ed.) Citation

Chen, Yicun, Haiming Lu, and Tianshu Lai. "Individual Contribution of Electrons and Holes to Photocarrier-induced Bandgap Renormalization in Intrinsic Bulk GaAs." Journal of Applied Physics 128, no. 11 (2020): 1. https://doi.org/10.1063/5.0015495.

MLA (9th ed.) Citation

Chen, Yicun, et al. "Individual Contribution of Electrons and Holes to Photocarrier-induced Bandgap Renormalization in Intrinsic Bulk GaAs." Journal of Applied Physics, vol. 128, no. 11, 2020, p. 1, https://doi.org/10.1063/5.0015495.