APA (7th ed.) Citation

Xi, K., Li, Y., Zheng, Z., Zhang, L., Liu, Y., & Mi, Y. (2020). Microstructure, dielectric properties, relaxation behavior, and ferroelectric properties of Gd-doped lead-free BZT ceramics by sol–gel process. Journal of Materials Science: Materials in Electronics, 31(24), 23044. https://doi.org/10.1007/s10854-020-04832-3

Chicago Style (17th ed.) Citation

Xi, Kaibiao, Yuanliang Li, Zhanshen Zheng, Lifang Zhang, Yun Liu, and Yueshan Mi. "Microstructure, Dielectric Properties, Relaxation Behavior, and Ferroelectric Properties of Gd-doped Lead-free BZT Ceramics by Sol–gel Process." Journal of Materials Science: Materials in Electronics 31, no. 24 (2020): 23044. https://doi.org/10.1007/s10854-020-04832-3.

MLA (9th ed.) Citation

Xi, Kaibiao, et al. "Microstructure, Dielectric Properties, Relaxation Behavior, and Ferroelectric Properties of Gd-doped Lead-free BZT Ceramics by Sol–gel Process." Journal of Materials Science: Materials in Electronics, vol. 31, no. 24, 2020, p. 23044, https://doi.org/10.1007/s10854-020-04832-3.