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Internal write‐back and read‐before‐write schemes to eliminate the disturbance to the half‐selected cells in SRAMs.

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Title: Internal write‐back and read‐before‐write schemes to eliminate the disturbance to the half‐selected cells in SRAMs.
Authors: Pasandi, Ghasem1, pasandi@usc.edu, Pedram, Massoud1
Source: IET Circuits, Devices & Systems (Wiley-Blackwell); Jul2018, Vol. 12 Issue 4, p460-466, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 148142420
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Internal write‐back and read‐before‐write schemes to eliminate the disturbance to the half‐selected cells in SRAMs.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Pasandi%2C+Ghasem%22">Pasandi, Ghasem</searchLink><relatesTo>1</relatesTo>, <i>pasandi@usc.edu</i><br /><searchLink fieldCode="AU" term="%22Pedram%2C+Massoud%22">Pedram, Massoud</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22IET+Circuits%2C+Devices+%26+Systems+%28Wiley-Blackwell%29%22">IET Circuits, Devices & Systems (Wiley-Blackwell)</searchLink>; Jul2018, Vol. 12 Issue 4, p460-466, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=148142420
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1049/iet-cds.2017.0227
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 7
        StartPage: 460
    Titles:
      – TitleFull: Internal write‐back and read‐before‐write schemes to eliminate the disturbance to the half‐selected cells in SRAMs.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Pasandi, Ghasem
      – PersonEntity:
          Name:
            NameFull: Pedram, Massoud
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 07
              Text: Jul2018
              Type: published
              Y: 2018
          Identifiers:
            – Type: issn-print
              Value: 1751858X
          Numbering:
            – Type: volume
              Value: 12
            – Type: issue
              Value: 4
          Titles:
            – TitleFull: IET Circuits, Devices & Systems (Wiley-Blackwell)
              Type: main
ResultId 1