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Internal write‐back and read‐before‐write schemes to eliminate the disturbance to the half‐selected cells in SRAMs.

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Bibliographic Details
Title: Internal write‐back and read‐before‐write schemes to eliminate the disturbance to the half‐selected cells in SRAMs.
Authors: Pasandi, Ghasem1, pasandi@usc.edu, Pedram, Massoud1
Source: IET Circuits, Devices & Systems (Wiley-Blackwell); Jul2018, Vol. 12 Issue 4, p460-466, 7p
Database: Applied Science & Technology Source
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