Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric.
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| Title: | Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric. |
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| Authors: | Li, Hong-cheng1, Liu, Yu-rong1, phlyr@scut.edu.cn, Geng, Kui-wei1, Wu, Wei-jing2, Yao, Ruo-he1, Lai, Pui-to3, phlyr@scut.edu.cn |
| Source: | Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jan2021, Vol. 39 Issue 1, p1-8, 8p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 148312396 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=148312396 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1116/6.0000522 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 1 Titles: – TitleFull: Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Li, Hong-cheng – PersonEntity: Name: NameFull: Liu, Yu-rong – PersonEntity: Name: NameFull: Geng, Kui-wei – PersonEntity: Name: NameFull: Wu, Wei-jing – PersonEntity: Name: NameFull: Yao, Ruo-he – PersonEntity: Name: NameFull: Lai, Pui-to IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Text: Jan2021 Type: published Y: 2021 Identifiers: – Type: issn-print Value: 21662746 Numbering: – Type: volume Value: 39 – Type: issue Value: 1 Titles: – TitleFull: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics Type: main |
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