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Device characteristics of InAlSb/InAs and InAlSb/InAsSb HFETs.

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Title: Device characteristics of InAlSb/InAs and InAlSb/InAsSb HFETs.
Authors: Chen, P.‐Y.1, Gao, Z.‐Y.1, Ho, H.‐C.1, Lin, H.‐K.1, Hsin, Y.‐M.1, yhsin@ee.ncu.edu.tw, Chyi, J.‐I.1
Source: Electronics Letters (Wiley-Blackwell); Aug2013, Vol. 49 Issue 17, p1026-1028, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 148780143
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Device characteristics of InAlSb/InAs and InAlSb/InAsSb HFETs.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Chen%2C+P%2E‐Y%2E%22">Chen, P.‐Y.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Gao%2C+Z%2E‐Y%2E%22">Gao, Z.‐Y.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Ho%2C+H%2E‐C%2E%22">Ho, H.‐C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Lin%2C+H%2E‐K%2E%22">Lin, H.‐K.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Hsin%2C+Y%2E‐M%2E%22">Hsin, Y.‐M.</searchLink><relatesTo>1</relatesTo>, <i>yhsin@ee.ncu.edu.tw</i><br /><searchLink fieldCode="AU" term="%22Chyi%2C+J%2E‐I%2E%22">Chyi, J.‐I.</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Electronics+Letters+%28Wiley-Blackwell%29%22">Electronics Letters (Wiley-Blackwell)</searchLink>; Aug2013, Vol. 49 Issue 17, p1026-1028, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=148780143
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1049/el.2013.0788
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 3
        StartPage: 1026
    Titles:
      – TitleFull: Device characteristics of InAlSb/InAs and InAlSb/InAsSb HFETs.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Chen, P.‐Y.
      – PersonEntity:
          Name:
            NameFull: Gao, Z.‐Y.
      – PersonEntity:
          Name:
            NameFull: Ho, H.‐C.
      – PersonEntity:
          Name:
            NameFull: Lin, H.‐K.
      – PersonEntity:
          Name:
            NameFull: Hsin, Y.‐M.
      – PersonEntity:
          Name:
            NameFull: Chyi, J.‐I.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 08
              Text: Aug2013
              Type: published
              Y: 2013
          Identifiers:
            – Type: issn-print
              Value: 00135194
          Numbering:
            – Type: volume
              Value: 49
            – Type: issue
              Value: 17
          Titles:
            – TitleFull: Electronics Letters (Wiley-Blackwell)
              Type: main
ResultId 1