Hardness, Raman spectrum, thermal properties, and laser damage threshold of Y3Sc2Ga3O12 single crystal.
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| Title: | Hardness, Raman spectrum, thermal properties, and laser damage threshold of Y3Sc2Ga3O12 single crystal. |
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| Authors: | Ding, Shoujun1,2, sjding@ahut.edu.cn, Ren, Hao1, Li, Hongyuan1, He, Aifeng3, haf780724@163.com |
| Source: | Journal of Materials Science: Materials in Electronics; Jan2021, Vol. 32 Issue 2, p1616-1622, 7p |
| Database: | Applied Science & Technology Source |
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| FullText | Links: – Type: pdflink Text: Availability: 1 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 148892340 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Hardness, Raman spectrum, thermal properties, and laser damage threshold of Y3Sc2Ga3O12 single crystal. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Ding%2C+Shoujun%22">Ding, Shoujun</searchLink><relatesTo>1,2</relatesTo>, <i>sjding@ahut.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Ren%2C+Hao%22">Ren, Hao</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Hongyuan%22">Li, Hongyuan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22He%2C+Aifeng%22">He, Aifeng</searchLink><relatesTo>3</relatesTo>, <i>haf780724@163.com</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Jan2021, Vol. 32 Issue 2, p1616-1622, 7p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=148892340 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-020-04930-2 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 1616 Titles: – TitleFull: Hardness, Raman spectrum, thermal properties, and laser damage threshold of Y3Sc2Ga3O12 single crystal. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Ding, Shoujun – PersonEntity: Name: NameFull: Ren, Hao – PersonEntity: Name: NameFull: Li, Hongyuan – PersonEntity: Name: NameFull: He, Aifeng IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 01 Text: Jan2021 Type: published Y: 2021 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 32 – Type: issue Value: 2 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
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