Barium Titanate Nickelate Nanostructured Materials Prepared by Solution Process for Resistive Random Access Memory Application.
Saved in:
| Title: | Barium Titanate Nickelate Nanostructured Materials Prepared by Solution Process for Resistive Random Access Memory Application. |
|---|---|
| Authors: | Li, Yu-An1, Lee, Ke-Jing1, Wang, Li-Wen1, Wang, Yeong-Her1, yhw@ee.ncku.edu.tw |
| Source: | Journal of Electronic Materials; Apr2021, Vol. 50 Issue 4, p2083-2089, 7p |
| Database: | Applied Science & Technology Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
|---|---|
| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 149374062 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Barium Titanate Nickelate Nanostructured Materials Prepared by Solution Process for Resistive Random Access Memory Application. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Li%2C+Yu-An%22">Li, Yu-An</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Lee%2C+Ke-Jing%22">Lee, Ke-Jing</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Li-Wen%22">Wang, Li-Wen</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Yeong-Her%22">Wang, Yeong-Her</searchLink><relatesTo>1</relatesTo>, <i>yhw@ee.ncku.edu.tw</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; Apr2021, Vol. 50 Issue 4, p2083-2089, 7p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=149374062 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11664-020-08701-x Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 2083 Titles: – TitleFull: Barium Titanate Nickelate Nanostructured Materials Prepared by Solution Process for Resistive Random Access Memory Application. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Li, Yu-An – PersonEntity: Name: NameFull: Lee, Ke-Jing – PersonEntity: Name: NameFull: Wang, Li-Wen – PersonEntity: Name: NameFull: Wang, Yeong-Her IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: Apr2021 Type: published Y: 2021 Identifiers: – Type: issn-print Value: 03615235 Numbering: – Type: volume Value: 50 – Type: issue Value: 4 Titles: – TitleFull: Journal of Electronic Materials Type: main |
| ResultId | 1 |