APA (7th ed.) Citation

Shivakumar, D. T., Knežević, T., & Nanver, L. K. (2021). Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si. Journal of Materials Science: Materials in Electronics, 32(6), 7123. https://doi.org/10.1007/s10854-021-05422-7

Chicago Style (17th ed.) Citation

Shivakumar, D. Thammaiah, Tihomir Knežević, and Lis K. Nanver. "Nanometer-thin Pure Boron CVD Layers as Material Barrier to Au or Cu Metallization of Si." Journal of Materials Science: Materials in Electronics 32, no. 6 (2021): 7123. https://doi.org/10.1007/s10854-021-05422-7.

MLA (9th ed.) Citation

Shivakumar, D. Thammaiah, et al. "Nanometer-thin Pure Boron CVD Layers as Material Barrier to Au or Cu Metallization of Si." Journal of Materials Science: Materials in Electronics, vol. 32, no. 6, 2021, p. 7123, https://doi.org/10.1007/s10854-021-05422-7.