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Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si.

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Title: Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si.
Authors: Shivakumar, D. Thammaiah1,2, Knežević, Tihomir2,3, Nanver, Lis K.1,2, l.k.nanver@utwente.nl
Source: Journal of Materials Science: Materials in Electronics; Mar2021, Vol. 32 Issue 6, p7123-7135, 13p
Database: Applied Science & Technology Source
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  Data: Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si.
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      – Type: doi
        Value: 10.1007/s10854-021-05422-7
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      – Code: eng
        Text: English
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        PageCount: 13
        StartPage: 7123
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      – TitleFull: Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si.
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            NameFull: Shivakumar, D. Thammaiah
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            NameFull: Knežević, Tihomir
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            NameFull: Nanver, Lis K.
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              Text: Mar2021
              Type: published
              Y: 2021
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              Value: 32
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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