APA (7th ed.) Citation

Hsu, C., Geng, X., Wu, W., Zhao, M., Huang, P., Zhang, X., . . . Lien, S. (2021). Effect of oxygen annealing temperature on properties of spatial atomic layer deposited aluminum-doped zinc oxide films. Materials Science in Semiconductor Processing, 133, N.PAG. https://doi.org/10.1016/j.mssp.2021.105929

Chicago Style (17th ed.) Citation

Hsu, Chia-Hsun, Xin-Peng Geng, Wan-Yu Wu, Ming-Jie Zhao, Pao-Hsun Huang, Xiao-Ying Zhang, Zhan-Bo Su, Zi-Rong Chen, and Shui-Yang Lien. "Effect of Oxygen Annealing Temperature on Properties of Spatial Atomic Layer Deposited Aluminum-doped Zinc Oxide Films." Materials Science in Semiconductor Processing 133 (2021): N.PAG. https://doi.org/10.1016/j.mssp.2021.105929.

MLA (9th ed.) Citation

Hsu, Chia-Hsun, et al. "Effect of Oxygen Annealing Temperature on Properties of Spatial Atomic Layer Deposited Aluminum-doped Zinc Oxide Films." Materials Science in Semiconductor Processing, vol. 133, 2021, p. N.PAG, https://doi.org/10.1016/j.mssp.2021.105929.