APA (7th ed.) Citation

Zhang, Y., Li, Y., Wang, J., Shen, Y., Du, L., Li, Y., . . . Hao, Y. (2020). High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage. Nanoscale Research Letters, 15(1), 1. https://doi.org/10.1186/s11671-020-03345-6

Chicago Style (17th ed.) Citation

Zhang, Yachao, et al. "High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage." Nanoscale Research Letters 15, no. 1 (2020): 1. https://doi.org/10.1186/s11671-020-03345-6.

MLA (9th ed.) Citation

Zhang, Yachao, et al. "High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage." Nanoscale Research Letters, vol. 15, no. 1, 2020, p. 1, https://doi.org/10.1186/s11671-020-03345-6.