Bibliographic Details
| Title: |
Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing. |
| Authors: |
Chery, N.1, nicolas.chery@cemes.fr, Zhang, M.1, Monflier, R.2, Mallet, N.2, Seine, G.1, Paillard, V.1, Poumirol, J. M.1, Larrieu, G.2, Royet, A. S.3, Kerdilès, S.3, Acosta-Alba, P.3, Perego, M.4, Bonafos, C.1, fuccio.cristiano@laas.fr, Cristiano, F.2, caroline.bonafos@cemes.fr |
| Source: |
Journal of Applied Physics; 2/14/2022, Vol. 131 Issue 6, p1-12, 12p |
| Database: |
Applied Science & Technology Source |
