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Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing.

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Title: Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing.
Authors: Chery, N.1, nicolas.chery@cemes.fr, Zhang, M.1, Monflier, R.2, Mallet, N.2, Seine, G.1, Paillard, V.1, Poumirol, J. M.1, Larrieu, G.2, Royet, A. S.3, Kerdilès, S.3, Acosta-Alba, P.3, Perego, M.4, Bonafos, C.1, fuccio.cristiano@laas.fr, Cristiano, F.2, caroline.bonafos@cemes.fr
Source: Journal of Applied Physics; 2/14/2022, Vol. 131 Issue 6, p1-12, 12p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 155259386
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=155259386
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        Value: 10.1063/5.0073827
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        Text: English
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        PageCount: 12
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              Text: 2/14/2022
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